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0 (hodnocen0 x )
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EB
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ONLINE
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1st ed.
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Linkoping : Linkopings Universitet, 2022
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1 online resource (82 pages)
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 Plný text PDF
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* Návod pro vzdálený přístup
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ISBN 9789179293901 (electronic bk.)
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Print version: Zhang, Hengfang Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures Linkoping : Linkopings Universitet,c2022
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Intro -- ABSTRACT -- POPULARVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Fundamental properties of group-III nitrides -- 1.3 MOCVD -- 1.4 Epitaxy of N-polar III-Nitrides -- 1.5 Characterization techniques -- 1.6 Summary of main results -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis.
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001897979
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express
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(Au-PeEL)EBL7075905
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(MiAaPQ)EBC7075905
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(OCoLC)1343247959
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