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0 (hodnocen0 x )
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EB
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ONLINE
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1st ed.
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Linkoping : Linkopings Universitet, 2022
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1 online resource (79 pages)
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 Plný text PDF
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* Návod pro vzdálený přístup
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ISBN 9789179292522 (electronic bk.)
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Print version: Papamichail, Alexis P-Type and Polarization Doping of GaN in Hot-wall MOCVD Linkoping : Linkopings Universitet,c2022
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Intro -- ABSTRACT -- POPULARVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Properties of group-III nitride semiconductors -- 1.3 MOCVD growth of Mg-doped GaN and AlGaN/GaN HEMTs -- 1.4 Characterization techniques -- 1.5 Summary of main results -- References -- List of abbreviations -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis -- Papers.
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001898686
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express
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(Au-PeEL)EBL30229642
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(MiAaPQ)EBC30229642
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Dotazy a připomínky